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Author/Creator Parvais, B.

1. A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability. (February 2018)

Authors:
Kaczer, B.; Franco, J.; Weckx, P.; Roussel, Ph.J.; Putcha, V.; Bury, E.; Simicic, M.; Chasin, A.; Linten, D.; Parvais, B.; Catthoor, F.; Rzepa, G.; Waltl, M.; Grasser, T.
Journal:
Microelectronics and reliability
Issue:
Volume 81(2018)
Page Start:
186
Record Type:
Journal Article
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗

3. The defect-centric perspective of device and circuit reliability—From gate oxide defects to circuits. (November 2016)

Authors:
Kaczer, B.; Franco, J.; Weckx, P.; Roussel, Ph.J.; Simicic, M.; Putcha, V.; Bury, E.; Cho, M.; Degraeve, R.; Linten, D.; Groeseneken, G.; Debacker, P.; Parvais, B.; Raghavan, P.; Catthoor, F.; Rzepa, G.; Waltl, M.; Goes, W.; Grasser, T.
Journal:
Solid-state electronics
Issue:
Volume 125(2016)
Page Start:
52
Record Type:
Journal Article
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗

4. The defect-centric perspective of device and circuit reliability—From gate oxide defects to circuits. (November 2016)

Authors:
Kaczer, B.; Franco, J.; Weckx, P.; Roussel, Ph.J.; Simicic, M.; Putcha, V.; Bury, E.; Cho, M.; Degraeve, R.; Linten, D.; Groeseneken, G.; Debacker, P.; Parvais, B.; Raghavan, P.; Catthoor, F.; Rzepa, G.; Waltl, M.; Goes, W.; Grasser, T.
Journal:
Solid-state electronics
Issue:
Volume 125(2016)
Page Start:
52
Record Type:
Journal Article
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗

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