Author/Creator: Park, Seran - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Park, Seran

1. Comparison of Strain Characteristics and Contact Resistances of Heavily Phosphorus‐Doped Si Formed by Phosphorus Implantation and In Situ Phosphorus‐Doped Si Epitaxial Growth. Issue 12 (29th March 2020)

Authors:: Ko, Eunjung; Lee, Juhee; Shin, Hyunsu; Park, Seran; Ko, Daehong
Other Names:: Lee Cheon guestEditor.; Choi Ji-Won guestEditor.
Journal:: Physica status solidi
Issue:: Volume 217:Issue 12(2020)
Page Start:: n/a
Record Type:: Journal Article
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2. Dopant Activation of In Situ Phosphorus‐Doped Silicon Using Multi‐Pulse Nanosecond Laser Annealing. Issue 12 (5th March 2020)

Authors:: Shin, Hyunsu; Lee, Minhyung; Ko, Eunjung; Ryu, Hwa-yoen; Park, Seran; Kim, Eunha; Ko, Dae-Hong
Other Names:: Lee Cheon guestEditor.; Choi Ji-Won guestEditor.
Journal:: Physica status solidi
Issue:: Volume 217:Issue 12(2020)
Page Start:: n/a
Record Type:: Journal Article
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3. Effect of P Concentration on Ti Silicide Formation in In‐Situ P Doped Epitaxial Si Films. Issue 10 (24th January 2019)

Authors:: Park, Seran; Shin, Hyunsu; Ko, Eunjung; Ko, Dae‐Hong
Other Names:: Murphy John D. guestEditor.
Journal:: Physica status solidi
Issue:: Volume 216:Issue 10(2019)
Page Start:: n/a
Record Type:: Journal Article
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4. Improvement of contact resistivity of titanium silicide on P-doped epitaxial Si using a Se interlayer. (27th October 2020)

Authors:: Park, Seran; Choi, Jeong-Min; Shin, Hyunsu; Ko, Eunjung; Ko, Dae-Hong
Journal:: Applied physics express
Issue:: Volume 13:Number 11(2020)
Page Start:
Record Type:: Journal Article
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