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You searched for: Author/Creator Park, Bo-Eun

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1. Bi-layer high-k dielectrics of Al2O3/ZrO2 to reduce damage to MoS2 channel layers during atomic layer deposition. (22nd November 2018)

2. Comparative study of the growth characteristics and electrical properties of atomic-layer-deposited HfO2 films obtained from metal halide and amide precursors. Issue 27 (29th June 2018)

3. Comparative study on atomic layer deposition of HfO2via substitution of ligand structure with cyclopentadiene. Issue 4 (19th December 2019)