1. Underlap counterdoping as an efficient means to suppress lateral leakage in the electron–hole bilayer tunnel FET. (25th February 2016) Authors: Alper, C; Palestri, P; Padilla, J L; Ionescu, A M Journal: Semiconductor science and technology Issue: Volume 31:Number 4(2016:Apr.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗