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Author/Creator Ottaviani, Alessandro

1. Limitations for Reliable Operation at Elevated Temperatures of Al2O3/AlGaN/GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors Grown by Metal‐Organic Chemical Vapor Deposition on Silicon Substrate. Issue 7 (20th November 2019)

Authors:
Heuken, Lars; Ottaviani, Alessandro; Fahle, Dirk; Zweipfennig, Thorsten; Lükens, Gerrit; Kalisch, Holger; Vescan, Andrei; Heuken, Michael; Burghartz, Joachim N.
Other Names:
Shahedipour-Sandvik F. Shadi guestEditor.; Qhalid Fareed guestEditor.
Journal:
Physica status solidi
Issue:
Volume 217:Issue 7(2020)
Page Start:
n/a
Record Type:
Journal Article
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗

2. Temperature Dependent Vertical Conduction of GaN HEMT Structures on Silicon and Bulk GaN Substrates. Issue 1 (6th September 2018)

Authors:
Heuken, Lars; Alshahed, Muhammad; Ottaviani, Alessandro; Alomari, Mohammed; Heuken, Michael; Wächter, Clemens; Bergunde, Thomas; Cora, Ildikó; Tóth, Lajos; Pécz, Béla; Burghartz, Joachim N.
Other Names:
Chowdhury Srabanti guestEditor.; Palacios Tomas guestEditor.; Xing Grace (Huili) guestEditor.
Journal:
Physica status solidi
Issue:
Volume 216:Issue 1(2019)
Page Start:
n/a
Record Type:
Journal Article
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗

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