1. Laplace DLTS study of the fine structure and metastability of the radiation-induced E3 defect level in GaAs. (5th November 2018) Authors: Taghizadeh, F; Ostvar, K; Auret, F D; Meyer, W E Journal: Semiconductor science and technology Issue: Volume 33:Number 12(2018:Dec.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗