1. Effective control of filament efficiency by means of spacer HfAlOx layers and growth temperature in HfO2 based ReRAM devices. (September 2021) Authors: Vinuesa, G.; Ossorio, O.G.; García, H.; Sahelices, B.; Castán, H.; Dueñas, S.; Kull, M.; Tarre, A.; Jogiaas, T.; Tamm, A.; Kasikov, A.; Kukli, K. Journal: Solid-state electronics Issue: Volume 183(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗