1. Preflow trimethylaluminum treatment effect on GaN growth on SiC with an ultrathin interlayer. (14th April 2016) Authors: Sun, Zheng; Nagamatsu, Kentaro; Olsson, Marc; Song, Peifeng; Deki, Manato; Nitta, Shugo; Honda, Yoshio; Amano, Hiroshi Journal: Japanese journal of applied physics Issue: Volume 55:Number 5(2016:May)Supplement Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗