1. Synaptic MoS2 transistors based on charge trapping two-dimensionally confined in Sr2-xCoxNb3O10 nanosheets. (15th June 2023) Authors: Oh, DaYea; Yim, Haena; Yoo, So Yeon; Oh, Gwangtaek; Yoon, Chansoo; Choi, Ji-Won; Park, Bae Ho Journal: Materials science in semiconductor processing Issue: Volume 160(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗