Author/Creator: Nonaka, Toshiaki - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Nonaka, Toshiaki

1. Effect of excimer laser annealing on a-InGaZnO thin-film transistors passivated by solution-processed hybrid passivation layers. (22nd December 2015)

Authors:: Bermundo, Juan Paolo; Ishikawa, Yasuaki; Fujii, Mami N; Nonaka, Toshiaki; Ishihara, Ryoichi; Ikenoue, Hiroshi; Uraoka, Yukiharu
Journal:: Journal of physics
Issue:: Volume 49:Number 3(2016)
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Record Type:: Journal Article
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2. Erratum: High Performance Amorphous In–Ga–Zn–O Thin-Film Transistors with Low Temperature High-k Solution Processed Hybrid Gate Insulator [ECS J. Solid State Sci. Technol., 9, 025002 (2020)]. (27th April 2020)

Authors:: Kesorn, Ployrung; Bermundo, Juan Paolo; Nonaka, Toshiaki; Fujii, Mami N.; Ishikawa, Yasuaki; Uraoka, Yukiharu
Journal:: ECS journal of solid state science and technology
Issue:: Volume 9:Number 4(2020)
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Record Type:: Journal Article
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3. High Performance Amorphous In–Ga–Zn–O Thin-Film Transistors with Low Temperature High-k Solution Processed Hybrid Gate Insulator. (21st January 2020)

Authors:: Kesorn, Ployrung; Bermundo, Juan Paolo; Nonaka, Toshiaki; Fujii, Mami N.; Ishikawa, Yasuaki; Uraoka, Yukiharu
Journal:: ECS journal of solid state science and technology
Issue:: Volume 9:Number 2(2020)
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Record Type:: Journal Article
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4. Highly reliable passivation layer for a-InGaZnO thin-film transistors fabricated using polysilsesquioxane. Issue 1633 (2014)

Authors:: Bermundo, Juan Paolo; Ishikawa, Yasuaki; Yamazaki, Haruka; Nonaka, Toshiaki; Uraoka, Yukiharu
Journal:: MRS proceedings
Issue:: Issue 1633:(2014)
Page Start:: 139
Record Type:: Journal Article
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