1. Role of vacancy defects in Al doped ZnO thin films for optoelectronic devices. (7th November 2017) Authors: Rotella, H; Mazel, Y; Brochen, S; Valla, A; Pautrat, A; Licitra, C; Rochat, N; Sabbione, C; Rodriguez, G; Nolot, E Journal: Journal of physics Issue: Volume 50:Number 48(2017) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗