Author/Creator: Niida, Yoshitaka - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Niida, Yoshitaka

1. Over 80% power-added-efficiency GaN high-electron-mobility transistors on free-standing GaN substrates. (29th December 2020)

Authors:: Kumazaki, Yusuke; Ohki, Toshihiro; Kotani, Junji; Ozaki, Shiro; Niida, Yoshitaka; Minoura, Yuichi; Nishimori, Masato; Okamoto, Naoya; Sato, Masaru; Nakamura, Norikazu; Watanabe, Keiji
Journal:: Applied physics express
Issue:: Volume 14:Number 1(2021)
Page Start:
Record Type:: Journal Article
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2. Reduction in current collapse of AlGaN/GaN HEMTs using methyl silsesquioxane‐based low‐k insulator films. Issue 5 (29th December 2014)

Authors:: Ozaki, Shiro; Makiyama, Kozo; Ohki, Toshihiro; Kamada, Yoichi; Sato, Masaru; Niida, Yoshitaka; Okamoto, Naoya; Masuda, Satoshi; Joshin, Kazukiyo
Journal:: Physica status solidi
Issue:: Volume 212:Issue 5(2015:May)
Page Start:: 1153
Record Type:: Journal Article
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3. Surface‐oxide‐controlled InAlN/GaN MOS‐HEMTs with water vapor. Issue 5 (20th December 2015)

Authors:: Ozaki, Shiro; Makiyama, Kozo; Ohki, Toshihiro; Kamada, Yoichi; Sato, Masaru; Niida, Yoshitaka; Okamoto, Naoya; Joshin, Kazukiyo
Journal:: Physica status solidi
Issue:: Volume 213:Issue 5(2016:May)
Page Start:: 1259
Record Type:: Journal Article
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