1. Influence of metal‐organic vapor phase epitaxy parameters and Si(111) substrate type on the properties of AlGaN/GaN HEMTs with thin simple buffer. Issue 4 (16th November 2016) Authors: Frayssinet, Eric; Leclaire, Paul; Mohdad, Jad; Latrach, Soumaya; Chenot, Sébastien; Nemoz, Maud; Damilano, Benjamin; Cordier, Yvon Journal: Physica status solidi Issue: Volume 214:Issue 4(2017) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗