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Author/Creator Nallabala, Nanda Kumar Reddy

1. A Study on Annealing Process Influenced Electrical Properties of Ni/CeO2/p‐Si/Al Schottky Barrier Diodes. Issue 1 (23rd August 2021)

Authors:
Nallabala, Nanda Kumar Reddy; Kummara, Venkata Krishnaiah; Chinnappa, Yuvaraj; George, P. P.; Manjunath, V.; Sanniboina, Jagadeesh; Reddy, S. Manikanteswara; Gangasani, Nethaji Reddy
Editors:
Thomas, Sabu; Zachariah, Suji Mary
Journal:
Macromolecular symposia
Issue:
Volume 398:Issue 1(2021)
Page Start:
n/a
Record Type:
Journal Article
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3. Self-powered and improved photoresponsive broadband photodetecting sensors using Au/NiFe2O4/p-Si heterojunction architecture. (15th March 2023)

Authors:
Nallabala, Nanda Kumar Reddy; Kushvaha, Sunil Singh; Kumari, A.; Singh, V.R.; Verma, V.K.; Kaleemulla, S.; Singh, Lokendra P.; Jilani, S.A.K.; Vattikuti, S.V. Prabhakar; Bakash, K. Rahim; Sambasivam, Sangaraju; Shim, Jaesool
Journal:
Materials science in semiconductor processing
Issue:
Volume 156(2023)
Page Start:
Record Type:
Journal Article
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4. Structural, optical and photoresponse characteristics of metal-insulator-semiconductor (MIS) type Au/Ni/CeO2/GaN Schottky barrier ultraviolet photodetector. (October 2020)

Authors:
Nallabala, Nanda Kumar Reddy; Godavarthi, Srinivas; Kummara, Venkata Krishnaiah; Kesarla, Mohan Kumar; Saha, Debabrata; Akkera, Harish Sharma; Guntupalli, Gopi Krishna; Kumar, Suresh; Vattikuti, S.V. Prabhakar
Journal:
Materials science in semiconductor processing
Issue:
Volume 117(2020)
Page Start:
Record Type:
Journal Article
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