1. (Invited) Highly Doped Si1-XGex Epitaxy in View of S/D Applications. (8th September 2020) Authors: Rengo, Gianluca; Porret, Clement; Hikavyy, Andriy Yakovitch; Rosseel, Erik; Nakazaki, Nobuya; Pourtois, Geoffrey; Vantomme, Andre; Loo, Roger Journal: ECS transactions Issue: Volume 98:Number 5(2020) Page Start: 27 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Low‐Temperature Selective Growth of Heavily Boron‐Doped Germanium Source/Drain Layers for Advanced pMOS Devices. Issue 3 (11th November 2019) Authors: Porret, Clement; Vohra, Anurag; Nakazaki, Nobuya; Hikavyy, Andriy; Douhard, Bastien; Meersschaut, Johan; Bogdanowicz, Janusz; Rosseel, Erik; Pourtois, Geoffrey; Langer, Robert; Loo, Roger Other Names: Tanaka Masaaki guestEditor.; Sugiyama Masakazu guestEditor.; Fujii Takuro guestEditor.; Ohya Shinobu guestEditor. Journal: Physica status solidi Issue: Volume 217:Issue 3(2020) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Surface morphology evolution during plasma etching of silicon: roughening, smoothing and ripple formation. (15th September 2017) Authors: Ono, Kouichi; Nakazaki, Nobuya; Tsuda, Hirotaka; Takao, Yoshinori; Eriguchi, Koji Journal: Journal of physics Issue: Volume 50:Number 41(2017) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗