1. GaN-based MIS-HEMTs with Al2O3 dielectric deposited by low-cost and environmental-friendly mist-CVD technique. (16th February 2021) Authors: Low, Rui Shan; Asubar, Joel T.; Baratov, Ali; Kamiya, Shunsuke; Nagase, Itsuki; Urano, Shun; Kawabata, Shinsaku; Tokuda, Hirokuni; Kuzuhara, Masaaki; Nakamura, Yusui; Naito, Kenta; Motoyama, Tomohiro; Yatabe, Zenji Journal: Applied physics express Issue: Volume 14:Number 3(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗