1. First Demonstration of a High‐Speed and High‐Power‐Tolerance InGaAs/Si Photodiode Fabricated by Atomic Diffusion Bonding. Issue 3 (29th September 2020) Authors: Yamada, Yuki; Nada, Masahiro; Uomoto, Miyuki; Shimatsu, Takehito; Nakajima, Fumito; Matsuzaki, Hideaki Other Names: Hammar Mattias guestEditor.; Hallén Anders guestEditor.; Lourdudoss Sebastian guestEditor. Journal: Physica status solidi Issue: Volume 218:Issue 3(2021) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗