1. Effects of a semiconductor matrix on the band anticrossing in dilute group II-VI oxides. (28th July 2015) Authors: Wełna, M; Kudrawiec, R; Nabetani, Y; Tanaka, T; Jaquez, M; Dubon, O D; Yu, K M; Walukiewicz, W Journal: Semiconductor science and technology Issue: Volume 30:Number 8(2015:Aug.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Effects of band anticrossing on the temperature dependence of the band gap of ZnSe1−xOx alloys. (19th December 2016) Authors: Wełna, M; Baranowski, M; Kudrawiec, R; Nabetani, Y; Walukiewicz, W Journal: Semiconductor science and technology Issue: Volume 32:Number 1(2017:Jan.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗