1. Gate Capacitance‐Dependent Field‐Effect Mobility in Solution‐Processed Oxide Semiconductor Thin‐Film Transistors. (24th April 2014) Authors: Lee, Eungkyu; Ko, Jieun; Lim, Keon‐Hee; Kim, Kyongjun; Park, Si Yun; Myoung, Jae M.; Kim, Youn Sang Journal: Advanced functional materials Issue: Volume 24:Number 29(2014) Page Start: 4689 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗