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Author/Creator Moreno, Enrique

2. Complement C3F allotype synthesized by liver recipient modifies transplantation outcome independently from donor hepatic C3. Issue 1 (25th November 2016)

Authors:
Valero‐Hervás, Diana María; Sánchez‐Zapardiel, Elena; Castro, María José; Gallego‐Bustos, Fernando; Cambra, Félix; Justo, Iago; Laguna‐Goya, Rocío; Jiménez‐Romero, Carlos; Moreno, Enrique; López‐Medrano, Francisco; San Juan, Rafael; Fernández‐Ruiz, Mario; Aguado, José María; Paz‐Artal, Estela
Journal:
Clinical transplantation
Issue:
Volume 31:Issue 1(2017)
Page Start:
n/a
Record Type:
Journal Article
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3. In Situ Observation of Low‐Power Nano‐Synaptic Response in Graphene Oxide Using Conductive Atomic Force Microscopy. Issue 26 (3rd June 2021)

Authors:
Hui, Fei; Liu, Peisong; Hodge, Stephen A.; Carey, Tian; Wen, Chao; Torrisi, Felice; Galhena, D. Thanuja L.; Tomarchio, Flavia; Lin, Yue; Moreno, Enrique; Roldan, Juan B.; Koren, Elad; Ferrari, Andrea C.; Lanza, Mario
Journal:
Small
Issue:
Volume 17:Issue 26(2021)
Page Start:
n/a
Record Type:
Journal Article
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4. Role of acid sphingomyelinase and IL-6 as mediators of endotoxin-induced pulmonary vascular dysfunction. Issue 5 (27th July 2016)

Authors:
Pandolfi, Rachele; Barreira, Bianca; Moreno, Enrique; Lara-Acedo, Victor; Morales-Cano, Daniel; Martínez-Ramas, Andrea; de Olaiz Navarro, Beatriz; Herrero, Raquel; Lorente, José Ángel; Cogolludo, Ángel; Pérez-Vizcaíno, Francisco; Moreno, Laura
Journal:
Thorax
Issue:
Volume 72:Issue 5(2017)
Page Start:
460
Record Type:
Journal Article
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5. Temperature of Conductive Nanofilaments in Hexagonal Boron Nitride Based Memristors Showing Threshold Resistive Switching (Adv. Electron. Mater. 8/2022). (23rd August 2022)

Authors:
Lanza, Mario; Palumbo, Felix; Shi, Yuanyuan; Aguirre, Fernando; Boyeras, Santiago; Yuan, Bin; Yalon, Eilam; Moreno, Enrique; Wu, Tianru; Roldan, Juan B.
Journal:
Advanced Electronic Materials
Issue:
Volume 8:Number 8(2022)
Page Start:
n/a
Record Type:
Journal Article
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6. Temperature of Conductive Nanofilaments in Hexagonal Boron Nitride Based Memristors Showing Threshold Resistive Switching. (12th August 2021)

Authors:
Lanza, Mario; Palumbo, Felix; Shi, Yuanyuan; Aguirre, Fernando; Boyeras, Santiago; Yuan, Bin; Yalon, Eilam; Moreno, Enrique; Wu, Tianru; Roldan, Juan B.
Journal:
Advanced Electronic Materials
Issue:
Volume 8:Number 8(2022)
Page Start:
n/a
Record Type:
Journal Article
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