1. Effect of AlN content on the lattice site location of terbium ions in AlxGa1−xN compounds. (22nd February 2016) Authors: Fialho, M; Rodrigues, J; Magalhães, S; Correia, M R; Monteiro, T; Lorenz, K; Alves, E Journal: Semiconductor science and technology Issue: Volume 31:Number 3(2016:Mar.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Validity of Vegard's rule for Al1−xInxN (0.08 < x < 0.28) thin films grown on GaN templates. (28th April 2017) Authors: Magalhães, S; Franco, N; Watson, I M; Martin, R W; O'Donnell, K P; Schenk, H P D; Tang, F; Sadler, T C; Kappers, M J; Oliver, R A; Monteiro, T; Martin, T L; Bagot, P A J; Moody, M P; Alves, E; Lorenz, K Journal: Journal of physics Issue: Volume 50:Number 20(2017) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗