1. >1200 V GaN‐on‐silicon Schottky diode. Issue 5 (27th March 2013) Authors: Boles, T.; Varmazis, C.; Carlson, D.; Palacios, T.; Turner, G. W.; Molnar, R. J.; Krishna, Sanjay; Plis, Elena Journal: Physica status solidi Issue: Volume 10:Issue 5(2013:May) Page Start: 835 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. High voltage GaN‐on‐silicon HEMT. Issue 5 (27th March 2013) Authors: Boles, T.; Varmazis, C.; Carlson, D.; Palacios, T.; Turner, G. W.; Molnar, R. J.; Krishna, Sanjay; Plis, Elena Journal: Physica status solidi Issue: Volume 10:Issue 5(2013:May) Page Start: 844 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗