1. An artificial synaptic transistor using an α-In2Se3 van der Waals ferroelectric channel for pattern recognition. Issue 58 (17th November 2021) Authors: Mohta, Neha; Rao, Ankit; Remesh, Nayana; Muralidharan, R.; Nath, Digbijoy N. Journal: RSC advances Issue: Volume 11:Issue 58(2021) Page Start: 36901 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Artificial Synapse Based on Back‐Gated MoS2 Field‐Effect Transistor with High‐k Ta2O5 Dielectrics. Issue 19 (12th October 2020) Authors: Mohta, Neha; Mech, Roop K.; Sanjay, Sooraj; Muralidharan, R.; Nath, Digbijoy N. Journal: Physica status solidi Issue: Volume 217:Issue 19(2020) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Artificial Synapse Based on Back‐Gated MoS2 Field‐Effect Transistor with High‐k Ta2O5 Dielectrics. Issue 19 (5th August 2020) Authors: Mohta, Neha; Mech, Roop K.; Sanjay, Sooraj; Muralidharan, R.; Nath, Digbijoy N. Journal: Physica status solidi Issue: Volume 217:Issue 19(2020) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. High Responsivity and Photovoltaic Effect Based on Vertical Transport in Multilayer α‐In2Se3. Issue 5 (14th January 2020) Authors: Mech, Roop K.; Mohta, Neha; Chatterjee, Avijit; Selvaraja, Shankar Kumar; Muralidharan, Rangarajan; Nath, Digbijoy N. Journal: Physica status solidi Issue: Volume 217:Issue 5(2020) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗