1. A dual gate material tunnel field effect transistor model incorporating two‐dimensional Poisson and Schrodinger wave equations. (11th July 2021) Authors: Mohanty, Sadhana Subhadarshini; Dutta, Pradipta; Das, Jitendra Kumar Journal: International journal of numerical modelling Issue: Volume 35:Number 1(2022) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗