1. A Half Adder Design Based on Ternary Multiplexers in Carbon Nano-Tube Field Effect Transistor (CNFET) Technology. (11th September 2020) Authors: Nikbakht, Elham; Dideban, Daryoosh; Moezi, Negin Journal: ECS journal of solid state science and technology Issue: Volume 9:Number 8(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. A novel graphene tunnelling field effect transistor (GTFET) using bandgap engineering. (December 2016) Authors: Mobarakeh, Mojtaba Saeidi; Moezi, Negin; Vali, Mehran; Dideban, Daryoosh Journal: Superlattices and microstructures Issue: Volume 100(2016) Page Start: 1221 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. A Scheme of Quantum Tunnel Field Effect Transistor Based on Armchair Graphene Nano-Ribbon. (17th September 2021) Authors: Vali, Mehran; Moezi, Negin; Heidari, Hadi; Bayani, Amirhossein Journal: ECS journal of solid state science and technology Issue: Volume 10:Number 9(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Benchmarking Performance of a Gate-All-Around Germanium Nanotube Field Effect Transistor (GAA-GeNTFET) against GAA-CNTFET. (15th February 2017) Authors: Bayani, Amir Hossein; Dideban, Daryoosh; Akbarzadeh, Mojtaba; Moezi, Negin Journal: ECS journal of solid state science and technology Issue: Volume 6:Number 4(2017) Page Start: M24 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Benchmarking Performance of a Gate-All-Around Germanium Nanotube Field Effect Transistor (GAA-GeNTFET) against GAA-CNTFET. (1st January 2017) Authors: Bayani, Amir Hossein; Dideban, Daryoosh; Akbarzadeh, Mojtaba; Moezi, Negin Journal: ECS journal of solid state science and technology Issue: Volume 6:Number 4(2017) Page Start: M24 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Boron Nitride-Graphene (BN-G) Bilayer as a Channel of Graphene Based Field Effect Transistor. (1st February 2023) Authors: Vali, Mehran; Moezi, Negin; Bayani, Amirhossein Journal: ECS journal of solid state science and technology Issue: Volume 12:Number 2(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Germanene nanoribbon tunneling field effect transistor (GeNR-TFET) with a 10 nm channel length: analog performance, doping and temperature effects. (11th March 2016) Authors: Bayani, Amir Hossein; Dideban, Daryoosh; Vali, Mehran; Moezi, Negin Journal: Semiconductor science and technology Issue: Volume 31:Number 4(2016:Apr.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Impact of uniaxial compressive strain on physical and electronic parameters of a 10 nm germanene nanoribbon field effect transistor. (December 2016) Authors: Bayani, Amir Hossein; Dideban, Daryoosh; Moezi, Negin Journal: Superlattices and microstructures Issue: Volume 100(2016) Page Start: 198 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Investigation of sub-10nm cylindrical surrounding gate germanium nanowire field effect transistor with different cross-section areas. (May 2017) Authors: Bayani, Amir Hossein; Dideban, Daryoosh; Voves, Jan; Moezi, Negin Journal: Superlattices and microstructures Issue: Volume 105(2017) Page Start: 110 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Quantum well resonant tunneling FET based on topological insulator. (December 2016) Authors: Vali, Mehran; Dideban, Daryoosh; Moezi, Negin Journal: Superlattices and microstructures Issue: Volume 100(2016) Page Start: 1256 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗