1. (Invited) Intrinsic Reliability Assessment of 650V Rated AlGaN/GaN Based Power Devices: An Industry Perspective. (4th May 2016) Authors: Moens, Peter; Banerjee, Abhishek; Constant, Aurore; Coppens, Peter; Caesar, Markus; Li, Zilan; Vandeweghe, Steven; Declercq, Frederick; Padmanabhan, Balaji; Jeon, Woochul; Guo, Jia; Salih, Ali; Tack, Marnix; Meneghini, Matteo; Dalcanale, Stefano; Tajilli, A; Meneghesso, Gaudenzio; Zanoni, Enrico;... Journal: ECS transactions Issue: Volume 72:Number 4(2016) Page Start: 65 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Field and hot electron-induced degradation in GaN-based power MIS-HEMTs. (September 2017) Authors: Tajalli, Alaleh; Meneghini, Matteo; Rossetto, Isabella; Moens, Peter; Banerjee, Abhishek; Zanoni, Enrico; Meneghesso, Gaudenzio Journal: Microelectronics and reliability Issue: Volume 76/77(2017) Page Start: 282 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. High voltage trapping effects in GaN-based metal–insulator–semiconductor transistors. (10th November 2015) Authors: Meneghesso, Gaudenzio; Meneghini, Matteo; Silvestri, Riccardo; Vanmeerbeek, Piet; Moens, Peter; Zanoni, Enrico Journal: Japanese journal of applied physics Issue: Volume 55:Number 1(2016:Jan.)Supplement Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Trapping phenomena and degradation mechanisms in GaN-based power HEMTs. (May 2018) Authors: Meneghini, Matteo; Tajalli, Alaleh; Moens, Peter; Banerjee, Abhishek; Zanoni, Enrico; Meneghesso, Gaudenzio Journal: Materials science in semiconductor processing Issue: Volume 78(2018) Page Start: 118 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗