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You searched for: Author/Creator Modolo, Nicola

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1. A novel on-wafer approach to test the stability of GaN-based devices in hard switching conditions: Study of hot-electron effects. (November 2020)

2. Failure Physics and Reliability of GaN‐Based HEMTs for Microwave and Millimeter‐Wave Applications: A Review of Consolidated Data and Recent Results. Issue 24 (19th November 2022)

4. Impact of an AlGaN spike in the buffer in 0.15 μm AlGaN/GaN HEMTs during step stress. (November 2021)

5. Investigation of the degradations in power GaN-on-Si MIS-HEMTs subjected to cumulative γ-ray irradiation. (September 2019)

6. Understanding the effects of off-state and hard-switching stress in gallium nitride-based power transistors. (12th November 2020)