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Author/Creator Mock, Alyssa L

1. Characterization of β-Ga2O3 homoepitaxial films and MOSFETs grown by MOCVD at high growth rates. (28th October 2020)

Authors:
Tadjer, Marko J; Alema, Fikadu; Osinsky, Andrei; Mastro, Michael A; Nepal, Neeraj; Woodward, Jeffrey M; Myers-Ward, Rachael L; Glaser, Evan R; Freitas, Jaime A; Jacobs, Alan G; Gallagher, James C; Mock, Alyssa L; Pennachio, Daniel J; Hajzus, Jenifer; Ebrish, Mona; Anderson, Travis J; Hobart, Karl...
Journal:
Journal of physics
Issue:
Volume 54:Number 3(2021)
Page Start:
Record Type:
Journal Article
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Available online (eLD content is only available in our Reading Rooms) ↗

2. Characterization of β-Ga2O3 homoepitaxial films and MOSFETs grown by MOCVD at high growth rates. (28th October 2020)

Authors:
Tadjer, Marko J; Alema, Fikadu; Osinsky, Andrei; Mastro, Michael A; Nepal, Neeraj; Woodward, Jeffrey M; Myers-Ward, Rachael L; Glaser, Evan R; Freitas, Jaime A; Jacobs, Alan G; Gallagher, James C; Mock, Alyssa L; Pennachio, Daniel J; Hajzus, Jenifer; Ebrish, Mona; Anderson, Travis J; Hobart, Karl...
Journal:
Journal of physics
Issue:
Volume 54:Number 3(2021)
Page Start:
Record Type:
Journal Article
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗

3. Structural and electronic properties of Si- and Sn-doped (−201) β-Ga2O3 annealed in nitrogen and oxygen atmospheres. (7th October 2020)

Authors:
Tadjer, Marko J; Freitas, Jaime A; Culbertson, James C; Weber, Marc H; Glaser, Evan R; Mock, Alyssa L; Mahadik, Nadeemullah A; Schmieder, Kenneth; Jackson, Eric; Gallagher, James C; Feigelson, Boris N; Kuramata, Akito
Journal:
Journal of physics
Issue:
Volume 53:Number 50(2020)
Page Start:
Record Type:
Journal Article
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗

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