1. Impact of fin length on threshold voltage modulation by back bias for Independent double-gate tunnel fin field-effect transistors. (September 2015) Authors: Mizubayashi, W.; Fukuda, K.; Mori, T.; Endo, K.; Liu, Y.X.; Matsukawa, T.; O'uchi, S.; Ishikawa, Y.; Migita, S.; Morita, Y.; Tanabe, A.; Tsukada, J.; Yamauchi, H.; Masahara, M.; Ota, H. Journal: Solid-state electronics Issue: Volume 111(2015) Page Start: 62 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Impact of fin length on threshold voltage modulation by back bias for Independent double-gate tunnel fin field-effect transistors. (September 2015) Authors: Mizubayashi, W.; Fukuda, K.; Mori, T.; Endo, K.; Liu, Y.X.; Matsukawa, T.; O'uchi, S.; Ishikawa, Y.; Migita, S.; Morita, Y.; Tanabe, A.; Tsukada, J.; Yamauchi, H.; Masahara, M.; Ota, H. Journal: Solid-state electronics Issue: Volume 111(2015) Page Start: 62 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗