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Author/Creator Miyake, Hidetsugu

1. Mechanism of void formation in TiN/AlSiCu/TiN/plasma-enhanced tetraethyl orthosilicate SiO2 multi-layer structures via high-temperature stress migration. (15th August 2018)

Authors:
Naoe, Takuya; Endoh, Hirohiko; Fuchino, Fumihiro; Miyata, Masanori; Miyake, Hidetsugu; Takahashi, Takuya; Fujimoto, Takaaki
Journal:
Materials science in semiconductor processing
Issue:
Volume 83(2018)
Page Start:
239
Record Type:
Journal Article
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