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3. Effectiveness of InGaAs/GaAs superlattice dislocation filter layers epitaxially grown on 200 mm Si wafers with and without Ge buffers. (17th August 2020)

6. Hetero-epitaxy of high quality germanium film on silicon substrate for optoelectronic integrated circuit applications. Issue 21 (4th September 2017)

7. Performance of AlGaInP LEDs on silicon substrates through low threading dislocation density (TDD) germanium buffer layer. (7th September 2018)