1. Electrically active induced energy levels and metastability of B and N vacancy-complexes in 4H–SiC. (17th April 2018) Authors: Igumbor, E; Olaniyan, O; Mapasha, R E; Danga, H T; Omotoso, E; Meyer, W E Journal: Journal of physics Issue: Volume 30:Number 18(2018) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Laplace DLTS study of the fine structure and metastability of the radiation-induced E3 defect level in GaAs. (5th November 2018) Authors: Taghizadeh, F; Ostvar, K; Auret, F D; Meyer, W E Journal: Semiconductor science and technology Issue: Volume 33:Number 12(2018:Dec.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗