1. (Invited) Doping Considerations for Finfet, Gate-All-Around, and Nanosheet Based Devices. (24th April 2020) Authors: Duffy, Ray; Meaney, Fintan; Galluccio, Emmanuele Journal: ECS transactions Issue: Volume 97:Number 3(2020) Page Start: 63 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗