1. High broadband photoconductivity of few-layered MoS2 field-effect transistors measured using multi-terminal methods: effects of contact resistance. Issue 45 (13th November 2020) Authors: Das, Priyanka; Nash, Jawnaye; Webb, Micah; Burns, Raelyn; Mapara, Varun N.; Ghimire, Govinda; Rosenmann, Daniel; Divan, Ralu; Karaiskaj, Denis; McGill, Stephen A.; Sumant, Anirudha V.; Dai, Qilin; Ray, Paresh C.; Tawade, Bhausaheb; Raghavan, Dharmaraj; Karim, Alamgir; Pradhan, Nihar R. Journal: Nanoscale Issue: Volume 12:Issue 45(2020) Page Start: 22904 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Insulator-to-metal phase transition in a few-layered MoSe2 field effect transistor. Issue 6 (18th January 2023) Authors: Pradhan, Nihar R.; Garcia, Carlos; Chakrabarti, Bhaswar; Rosenmann, Daniel; Divan, Ralu; Sumant, Anirudha V.; Miller, Suzanne; Hilton, David; Karaiskaj, Denis; McGill, Stephen A. Journal: Nanoscale Issue: Volume 15:Issue 6(2023) Page Start: 2667 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Raman and electrical transport properties of few-layered arsenic-doped black phosphorus. Issue 39 (2nd October 2019) Authors: Pradhan, Nihar R.; Garcia, Carlos; Lucking, Michael C.; Pakhira, Srimanta; Martinez, Juan; Rosenmann, Daniel; Divan, Ralu; Sumant, Anirudha V.; Terrones, Humberto; Mendoza-Cortes, Jose L.; McGill, Stephen A.; Zhigadlo, Nikolai D.; Balicas, Luis Journal: Nanoscale Issue: Volume 11:Issue 39(2019) Page Start: 18449 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗