Author/Creator: Mauze, Akhil - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Mauze, Akhil

1. Electron effective mass determination across a β-(Al0.2Ga0.8)2O3//β-Ga2O3 interface by Kramers-Kronig analysis. (August 2021)

Authors:: Chmielewski, Adrian; Idrobo, Juan Carlos; Zhang, Yuewei; Mauze, Akhil; Alem, Nasim
Journal:: Microscopy and microanalysis
Issue:: Volume 27:Supplement 1(2021)
Page Start:: 1168
Record Type:: Journal Article
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2. Ga interstitial stability and its effect on the electronic properties of β-(AlxGa1-x)2O3 alloy. (August 2021)

Authors:: Chmielewski, Adrian; Deng, Ziling; Zhang, Yuewei; Mauze, Akhil; Windl, Wolfgang; Alem, Nasim
Journal:: Microscopy and microanalysis
Issue:: Volume 27:Supplement 1(2021)
Page Start:: 2358
Record Type:: Journal Article
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3. Investigation of the Atomic and Electronic Structure of β-(Al0.2Ga0.8)2O3 Alloys by STEM-EELS. (August 2019)

Authors:: Chmielewski, Adrian; Moradifar, Parivash; Miao, Leixin; Lopez, Kleyser A.; Zhang, Yuewei; Mauze, Akhil; Speck, James S.; Alem, Nasim
Journal:: Microscopy and microanalysis
Issue:: Volume 25:(2022)Supplement 2
Page Start:: 2186
Record Type:: Journal Article
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4. Metal-oxide catalyzed epitaxy (MOCATAXY): the example of the O plasma-assisted molecular beam epitaxy of β-(AlxGa1−x)2O3/β-Ga2O3 heterostructures. (25th October 2018)

Authors:: Vogt, Patrick; Mauze, Akhil; Wu, Feng; Bonef, Bastien; Speck, James S.
Journal:: Applied physics express
Issue:: Volume 11:Number 11(2018)
Page Start:
Record Type:: Journal Article
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5. N-type dopants in (001) β-Ga2O3 grown on (001) β-Ga2O3 substrates by plasma-assisted molecular beam epitaxy. (1st March 2018)

Authors:: Han, Sang-Heon; Mauze, Akhil; Ahmadi, Elaheh; Mates, Tom; Oshima, Yuichi; Speck, James S
Journal:: Semiconductor science and technology
Issue:: Volume 33:Number 4(2018:Apr.)
Page Start:
Record Type:: Journal Article
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6. Near unity ideality factor for sidewall Schottky contacts on un-intentionally doped β-Ga2O3. (13th March 2019)

Authors:: Zhang, Yuewei; Mauze, Akhil; Alema, Fikadu; Osinsky, Andrei; Speck, James S.
Journal:: Applied physics express
Issue:: Volume 12:Number 4(2019)
Page Start:
Record Type:: Journal Article
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7. Point Defect and Their Influence on the Atomic and Electronic Structure of β-(AlxGa1-x)2O3 Alloys by STEM-EELS. (August 2020)

Authors:: Chmielewski, Adrian; Deng, Sarah; Moradifar, Parivash; Miao, Leixin; Lopez, Kleyser Agueda; Mauze, Akhil; Zhang, Yuewei; Speck, James; Windl, Wolfgang; Alem, Nasim
Journal:: Microscopy and microanalysis
Issue:: Volume 26:(2020)Supplement 2
Page Start:: 622
Record Type:: Journal Article
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8. Β-Ga2O3 lateral transistors with high aspect ratio fin-shape channels. (18th December 2020)

Authors:: Zhang, Yuewei; Mauze, Akhil; Alema, Fikadu; Osinsky, Andrei; Itoh, Takeki; Speck, James S.
Journal:: Japanese journal of applied physics
Issue:: Volume 60:Number 1(2021)
Page Start:
Record Type:: Journal Article
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