1. Investigation and reduction of RF loss induced by Al diffusion at the AlN/Si(111) interface in GaN-based HEMT buffer stacks. (3rd June 2021) Authors: Mauder, C; Hahn, H; Marx, M; Gao, Z; Oligschlaeger, R; Zweipfennig, T; Noculak, A; Negra, R; Kalisch, H; Vescan, A; Heuken, M Journal: Semiconductor science and technology Issue: Volume 36:Number 7(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗