1. Flow modulation metalorganic vapor phase epitaxy of GaN at temperatures below 600 ºC. (29th July 2020) Authors: Reilly, Caroline E; Mates, Thomas E; Webb, Micah; Nakamura, Shuji; DenBaars, Steven P; Keller, Stacia Journal: Semiconductor science and technology Issue: Volume 35:Number 9(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗