Author/Creator: Massabuau, Fabien - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Massabuau, Fabien

1. Mechanisms preventing trench defect formation in InGaN/GaN quantum well structures using hydrogen during GaN barrier growth. Issue 8 (22nd May 2017)

Authors:: Massabuau, Fabien; Kappers, Menno; Humphreys, Colin; Oliver, Rachel
Journal:: Physica status solidi
Issue:: Volume 254:Issue 8(2017)
Page Start:: n/a
Record Type:: Journal Article
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2. Preface for the special issue on Microscopy of Semiconducting Materials 2019. (13th October 2020)

Authors:: Walther, Thomas; Calahorra, Yonatan; Massabuau, Fabien
Journal:: Semiconductor science and technology
Issue:: Volume 35:Number 12(2020)
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Record Type:: Journal Article
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3. X-ray diffraction analysis of cubic zincblende III-nitrides. (26th September 2017)

Authors:: Frentrup, Martin; Lee, Lok Yi; Sahonta, Suman-Lata; Kappers, Menno J; Massabuau, Fabien; Gupta, Priti; Oliver, Rachel A; Humphreys, Colin J; Wallis, David J
Journal:: Journal of physics
Issue:: Volume 50:Number 43(2017)
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Record Type:: Journal Article
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4. X‐ray reflectivity method for the characterization of InGaN/GaN quantum well interface. Issue 8 (6th January 2017)

Authors:: Massabuau, Fabien; Piot, Nicolas; Frentrup, Martin; Wang, Xiuze; Avenas, Quentin; Kappers, Menno; Humphreys, Colin; Oliver, Rachel
Journal:: Physica status solidi
Issue:: Volume 254:Issue 8(2017)
Page Start:: n/a
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗