Author/Creator: Masin, F. - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Masin, F.

1. Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs. (November 2022)

Authors:: Modolo, N.; Fregolent, M.; Masin, F.; Benato, A.; Bettini, A.; Buffolo, M.; De Santi, C.; Borga, M.; Posthuma, N.; Bakeroot, B.; Decoutere, S.; Vogrig, D.; Neviani, A.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Journal:: Microelectronics and reliability
Issue:: Volume 138(2022)
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Record Type:: Journal Article
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2. Cryogenic-temperature investigation of negative bias stress inducing threshold voltage instabilities on 4H-SiC MOSFETs. (November 2022)

Authors:: Masin, F.; De Santi, C.; Lettens, J.; Geenen, F.; Meneghesso, G.; Zanoni, E.; Moens, P.; Meneghini, M.
Journal:: Microelectronics and reliability
Issue:: Volume 138(2022)
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Record Type:: Journal Article
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3. ESD-failure of E-mode GaN HEMTs: Role of device geometry and charge trapping. (September 2019)

Authors:: Canato, E.; Meneghini, M.; Nardo, A.; Masin, F.; Barbato, A.; Barbato, M.; Stockman, A.; Banerjee, A.; Moens, P.; Zanoni, E.; Meneghesso, G.
Journal:: Microelectronics and reliability
Issue:: Volume 100/101(2019)
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Record Type:: Journal Article
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4. OFF-state trapping phenomena in GaN HEMTs: Interplay between gate trapping, acceptor ionization and positive charge redistribution. (November 2020)

Authors:: Canato, E.; Meneghini, M.; De Santi, C.; Masin, F.; Stockman, A.; Moens, P.; Zanoni, E.; Meneghesso, G.
Journal:: Microelectronics and reliability
Issue:: Volume 114(2020)
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Record Type:: Journal Article
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