1. Effect of SiNx gate insulator thickness on electrical properties of SiNx/In0.17Al0.83N/AlN/GaN MIS–HEMTs. (April 2015) Authors: Downey, B.P.; Meyer, D.J.; Katzer, D.S.; Marron, T.M.; Pan, M.; Gao, X. Journal: Solid-state electronics Issue: Volume 106(2015) Page Start: 12 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗