1. Ab initio studies of the optoelectronic structure of undoped and doped silicon nanocrystals and nanowires: the role of size, passivation, symmetry and phase. (28th February 2020) Authors: Ossicini, Stefano; Marri, Ivan; Amato, Michele; Palummo, Maurizia; Canadell, Enric; Rurali, Riccardo Journal: Faraday discussions Issue: Volume 222(2019) Page Start: 217 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Carrier Multiplication in Silicon Nanocrystals: Theoretical Methodologies and Role of the Passivation. Issue 12 (15th November 2017) Authors: Marri, Ivan; Govoni, Marco; Ossicini, Stefano Journal: Physica status solidi Issue: Volume 14:Issue 12(2017) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. First Principle Studies of B and P Doped Si Nanocrystals. Issue 3 (11th September 2017) Authors: Marri, Ivan; Degoli, Elena; Ossicini, Stefano Other Names: Boninelli Simona guestEditor. Journal: Physica status solidi Issue: Volume 215:Issue 3(2018) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. First Principles Modeling of Si/Ge Nanostructures for Photovoltaic and Optoelectronic Applications. Issue 10 (19th February 2018) Authors: Marri, Ivan; Amato, Michele; Guerra, Roberto; Ossicini, Stefano Journal: Physica status solidi Issue: Volume 255:Issue 10(2018) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Multiple exciton generation in isolated and interacting silicon nanocrystals. Issue 28 (12th July 2021) Authors: Marri, Ivan; Ossicini, Stefano Journal: Nanoscale Issue: Volume 13:Issue 28(2021) Page Start: 12119 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Surface chemistry effects on work function, ionization potential and electronic affinity of Si(100), Ge(100) surfaces and SiGe heterostructures. Issue 44 (9th November 2020) Authors: Marri, Ivan; Amato, Michele; Bertocchi, Matteo; Ferretti, Andrea; Varsano, Daniele; Ossicini, Stefano Journal: Physical chemistry chemical physics Issue: Volume 22:Issue 44(2020) Page Start: 25593 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Tuning the Work Function of Si(100) Surface by Halogen Absorption: A DFT Study. Issue 12 (12th December 2017) Authors: Bertocchi, Matteo; Amato, Michele; Marri, Ivan; Ossicini, Stefano Journal: Physica status solidi Issue: Volume 14:Issue 12(2017) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗