1. Ternary and quaternary Ni(Si)Ge(Sn) contact formation for highly strained Ge p- and n-MOSFETs. (31st March 2015) Authors: Wirths, S; Troitsch, R; Mussler, G; Hartmann, J-M; Zaumseil, P; Schroeder, T; Mantl, S; Buca, D Journal: Semiconductor science and technology Issue: Volume 30:Number 5(2015:May) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗