Search

Search Constraints

You searched for: Author/Creator Major, Márton

Search Results

3. Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices. (5th August 2019)

5. Resistive Switching: Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices (Adv. Electron. Mater. 10/2019). (10th October 2019)