1. Tungsten oxide ion gel-gated transistors: how structural and electrochemical properties affect the doping mechanism. Issue 8 (7th February 2018) Authors: S. Barbosa, M.; M. B. Oliveira, F.; Meng, X.; Soavi, F.; Santato, C.; O. Orlandi, M. Journal: Journal of materials chemistry Issue: Volume 6:Issue 8(2018) Page Start: 1980 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗