1. A low-energy sensitive compact gamma-ray detector based on LaBr3 and SiPM for GECAM. (16th August 2018) Authors: Lv, P.; Xiong, S.L.; Sun, X.L.; Lv, J.G.; Li, Y.G. Journal: Journal of instrumentation Issue: Volume 13:Number 8(2018:Aug.) Page Start: P08014 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Comparison of microstructure and electrical characteristics of sputtering-derived HfGdO/HfTiO and HfTiO/HfGdO gate stacks. Issue 8 (September 2015) Authors: Zhang, J.W.; He, G.; Chen, H.S.; Lv, J.G.; Gao, J.; Ma, R.; Liu, M.; Sun, Z.Q. Journal: Ceramics international Issue: Volume 41:Issue 8(2015) Page Start: 10216 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Effective identification of paints pigments in hit-and-run cases with confocal Raman microscope. Issue 4 (4th July 2016) Authors: Lv, J.G.; Liu, S.; Feng, J.M.; Liu, Y.; Zhou, S.D.; Chen, R. Journal: Pigment & resin technology Issue: Volume 45:Issue 4(2016) Page Start: 294 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Effective identification of paints pigments in hit-and-run cases with confocal Raman microscope. Issue 4 (4th July 2016) Authors: Lv, J.G.; Liu, S.; Feng, J.M.; Liu, Y.; Zhou, S.D.; Chen, R. Journal: Pigment & resin technology Issue: Volume 45:Issue 4(2016) Page Start: 294 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Microstructure, optical and electrical properties of sputtered HfTiO high-k gate dielectric thin films. Issue 10 (1st August 2016) Authors: Jiang, S.S.; He, G.; Gao, J.; Xiao, D.Q.; Jin, P.; Li, W.D.; Lv, J.G.; Liu, M.; Liu, Y.M.; Sun, Z.Q. Journal: Ceramics international Issue: Volume 42:Issue 10(2016) Page Start: 11640 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Nitrogen-concentration modulated interface quality, band alignment and electrical properties of HfTiON/Ge gate stack pretreated by trimethylaluminum precursor. (July 2017) Authors: Gao, J.; He, G.; Xiao, D.Q.; Jiang, S.S.; Lv, J.G.; Cheng, C.; Sun, Z.Q. Journal: Materials research bulletin Issue: Volume 91(2017) Page Start: 166 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗