1. Polarization doping technology towards high performance GaN-based heterostructure devices. (February 2019) Authors: Wei, J; Ouyang, D F; Deng, S Y; Peng, F; Yang, C; Luo, X R Journal: IOP conference series Issue: Volume 479(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗