1. Corrigendum to "Removal mechanism of sapphire substrates (0001, 112‾0 and 101‾0) in mechanical planarization machining" [Ceramics Int. 43 (2017) 16178–16184]. Issue 17 (1st December 2019) Authors: Luo, Qiufa; Lu, Jing; Xu, Xipeng; Jiang, Feng Journal: Ceramics international Issue: Volume 45:Issue 17(2019)Part A Page Start: 22442 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Removal mechanism of 4H- and 6H-SiC substrates (0001 and 0001¯) in mechanical planarization machining. (January 2019) Authors: Lu, Jing; Luo, Qiufa; Xu, Xipeng; Huang, Hui; Jiang, Feng Journal: Proceedings of the Institution of Mechanical Engineers Issue: Volume 233:Number 1(2019) Page Start: 69 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Removal mechanism of sapphire substrates (0001, 112¯0 and 101¯0) in mechanical planarization machining. Issue 18 (15th December 2017) Authors: Luo, Qiufa; Lu, Jing; Xu, Xipeng; Jiang, Feng Journal: Ceramics international Issue: Volume 43:Issue 18(2017) Page Start: 16178 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Study on nanomechanical properties of 4H-SiC and 6H-SiC by molecular dynamics simulations. Issue 17 (1st December 2019) Authors: Tian, Zige; Xu, Xipeng; Jiang, Feng; Lu, Jing; Luo, Qiufa; Lin, Jiaming Journal: Ceramics international Issue: Volume 45:Issue 17(2019)Part A Page Start: 21998 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Study on the processing characteristics of SiC and sapphire substrates polished by semi-fixed and fixed abrasive tools. (December 2016) Authors: Luo, Qiufa; Lu, Jing; Xu, Xipeng Journal: Tribology international Issue: Volume 104(2016) Page Start: 191 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗