1. Comparison and characterization of different tunnel layers, suitable for passivated contact formation. (3rd July 2017) Authors: Ling, Zhi Peng; Xin, Zheng; Ke, Cangming; Buatis, Kitz Jammaal; Duttagupta, Shubham; Lee, Jae Sung; Lai, Archon; Hsu, Adam; Rostan, Johannes; Stangl, Rolf Journal: Japanese journal of applied physics Issue: Volume 56:Number 8(2017)Supplement 2 Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Excellent passivation of thin silicon wafers by HF‐free hydrogen plasma etching using an industrial ICPECVD tool. Issue 1 (17th November 2014) Authors: Tang, Muzhi; Ge, Jia; Wong, Johnson; Ling, Zhi Peng; Dippell, Torsten; Zhang, Zhenhao; Huber, Marco; Doerr, Manfred; Hohn, Oliver; Wohlfart, Peter; Aberle, Armin Gerhard; Mueller, Thomas Journal: Physica status solidi Issue: Volume 9:Issue 1(2015:Jan.) Page Start: 47 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Numerical investigation of metal–semiconductor–insulator–semiconductor passivated hole contacts based on atomic layer deposited AlOx. (4th July 2017) Authors: Ke, Cangming; Xin, Zheng; Ling, Zhi Peng; Aberle, Armin G.; Stangl, Rolf Journal: Japanese journal of applied physics Issue: Volume 56:Number 8(2017)Supplement 2 Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Surface passivation investigation on ultra-thin atomic layer deposited aluminum oxide layers for their potential application to form tunnel layer passivated contacts. (6th July 2017) Authors: Xin, Zheng; Ling, Zhi Peng; Nandakumar, Naomi; Kaur, Gurleen; Ke, Cangming; Liao, Baochen; Aberle, Armin G.; Stangl, Rolf Journal: Japanese journal of applied physics Issue: Volume 56:Number 8(2017)Supplement 2 Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗