Author/Creator: Lin, Pao-Sheng - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Lin, Pao-Sheng

1. An Improved GaN-Based Light-Emitting Diode with a SiO2 Current Blocking Layer Embedded in Stair-Like AZO Transparent Structure. (1st January 2017)

Authors:: Liou, Syuan-Hao; Tsai, Jung-Hui; Liu, Wen-Chau; Lin, Pao-Sheng; Chen, Yu-Chi
Journal:: ECS journal of solid state science and technology
Issue:: Volume 6:Number 10(2017)
Page Start:: R149
Record Type:: Journal Article
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2. An Improved GaN-Based Light-Emitting Diode with a SiO2 Current Blocking Layer Embedded in Stair-Like AZO Transparent Structure. (29th September 2017)

Authors:: Liou, Syuan-Hao; Tsai, Jung-Hui; Liu, Wen-Chau; Lin, Pao-Sheng; Chen, Yu-Chi
Journal:: ECS journal of solid state science and technology
Issue:: Volume 6:Number 10(2017)
Page Start:: R149
Record Type:: Journal Article
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3. Influence of AZO stair-like transparent layers on GaN-based light-emitting diodes. (October 2017)

Authors:: Liou, Syuan-Hao; Tsai, Jung-Hui; Liu, Wen-Chau; Lin, Pao-Sheng; Chen, Yu-Chi
Journal:: Superlattices and microstructures
Issue:: Volume 110(2017)
Page Start:: 171
Record Type:: Journal Article
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4. Inverter Logic of AlGaAs/InGaAs Enhancement/Depletion-Mode Pseudomorphic High Electron Mobility Transistors with Virtual Channel Layers. (1st January 2019)

Authors:: Tsai, Jung-Hui; Lin, Pao-Sheng; Lour, Wen-Shiung; Liu, Wen-Chau
Journal:: ECS journal of solid state science and technology
Issue:: Volume 8:Number 10(2019)
Page Start:: Q211
Record Type:: Journal Article
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5. Inverter Logic of AlGaAs/InGaAs Enhancement/Depletion-Mode Pseudomorphic High Electron Mobility Transistors with Virtual Channel Layers. (9th October 2019)

Authors:: Tsai, Jung-Hui; Lin, Pao-Sheng; Lour, Wen-Shiung; Liu, Wen-Chau
Journal:: ECS journal of solid state science and technology
Issue:: Volume 8:Number 10(2019)
Page Start:: Q211
Record Type:: Journal Article
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6. Temperature-Dependent Study of AlGaAs/InGaAs Integrated Depletion/Enhancement-Mode High Electron Mobility Transistors with Virtual Channel Layers. (29th June 2020)

Authors:: Tsai, Jung-Hui; Lin, Pao-Sheng; Liu, Wen-Chau
Journal:: ECS journal of solid state science and technology
Issue:: Volume 9:Number 5(2020)
Page Start:
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗