1. Suppressing the Initial Growth of Sidewall GaN by Modifying AlN-Coated Patterned Sapphire with KOH-Based Etchant. (1st January 2020) Authors: Hsu, Wen-Yang; Kuo, Yen-Ting; Hung, Shang-Shih; Wu, Pei-Yu; Sheu, Jinn-Kong; Lin, Kun-Lin; Wu, YewChung Sermon Journal: ECS journal of solid state science and technology Issue: Volume 9:Number 1(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗